deposition of al/cu multilayer by double targets cylindrical dc magnetron sputtering system

Deposition of Al/Cu Multilayer By Double Targets Cylindrical DC Magnetron Sputtering System

A cylindrical direct current magnetron sputtering coater with two targets for deposition of multilayer thin films and cermet solar selective surfaces has been constructed. The substrate holder was able to rotate around the target for obtaining the uniform layer and separated multilayer phases. The Al/ Cu multilayer film was deposited on the glass substrate at the following conditions: Working g...

DEPOSITION OF THIN TiO2 FILMS BY DC MAGNETRON SPUTTERING METHOD

Sputter deposition process is another old technique being used in modern semiconductor industries. Sputtering is a process that can deposit TiO2 material on wafer/glass substrates. In this process target is connected to negative high voltage. Further argon gas is introduced into the chamber and is ionized to a positive charge. The positively charged argon atoms are attracted and strike the nega...

Deposition of Multilayer Optical Coatings Using Closed Field Magnetron Sputtering

Closed field” magnetron (CFM) sputtering offers a flexible and high throughput deposition process for optical coatings and thin films required in display technologies. CFM sputtering uses two or more different metal targets to deposit multilayers comprising a wide range of dielectrics, metals and conductive oxides. Moreover, CFM provides a room temperature deposition process with high ion curre...

CrNx Films Prepared by DC Magnetron Sputtering and High-Power Pulsed Magnetron Sputtering: A Comparative Study

CrNx (0 ≤ x ≤ 0.91) films synthesized using highpower pulsed magnetron sputtering, also known as high-power impulse magnetron sputtering (HiPIMS), have been compared with those made by conventional direct-current (dc) magnetron sputtering (DCMS) operated at the same average power. The HiPIMS deposition rate relative to the DCMS rate was found to decrease linearly with increasing emission streng...

Ti3sic2­formation during Ti–c–si Multilayer Deposition by Magnetron Sputtering at 650 °c Original Citation

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Ti3SiC2-formation during Ti–C–Si multilayer deposition by magnetron sputtering at 650 °C